Impact Ionization in Strained-Si/SiGe Heterostructures

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 813-816

  Waldron, Niamh S ^a   Pitera, Arthur J ^a   Lee, Minjoo L ^a   Fitzgerald, Eugene A ^a   Del Alamo, Jesús A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN-SOURCE VOLTAGE; SELF-HEATING PROCESSES;

CHEMICAL MECHANICAL POLISHING; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; EQUIPMENT TESTING; HEAT RESISTANCE; IMPACT IONIZATION; LEAKAGE CURRENTS; METALLIZING; PASSIVATION; PHOTODIODES; POSITIVE TEMPERATURE COEFFICIENT; SILICON COMPOUNDS; SURFACE ROUGHNESS;

HETEROJUNCTIONS;

EID: 0842331293     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. J. L. Hoyt et al., IEDM Tech. Dig., 2002, p. 23.
2. R. Van Overstraeten et al., Journal of Solid State Electronics, vol. 13, p. 583, 1970.
3. M.V. Fischetti et al., Joun. App. Phys., vol. 80, p. 2234, 1996.
4. K. Jenkins et al., IEEE Elec. Device Lett., vol. 23, p.360, 2002.
5. J. Lee et al., IEEE Trans. on Elec. Devices, vol. 43, p. 977, 1996.
6. M.Rashed et al., University/Government/Industry Microelectronics Symposium, p. 168, 1995.
7. A. Neviani et al,. IEEE Elec. Device Lett., vol. 18, p. 619, 1997.
8. C. G. Van de Walle et al., Physical Review B (Condensed Matter), vol. 34, p. 5621, 1986.
9. T. Vogelsang et al., Appl. Phys. Lett., vol. 63, p. 186, 1993.