Projecting lifetime of deep submicron MOSFETs

IEEE Transactions on Electron Devices

Volumn 48, Issue 4, 2001, Pages 671-678

  Li, Erhong ^a,b,c   Rosenbaum, Elyse ^a,b   Tao, Jiang ^d   Fang, Peng ^a,d  

^a IEEE   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c AGERE SYSTEMS   (United States)

^d ADVANCED MICRO DEVICES   (United States)

Author keywords

Hot carrier induced degradation; Worst case stress condition

Indexed keywords

STRESS VOLTAGE;

DEGRADATION; ELECTRON TRAPS; HOT CARRIERS; MEASUREMENT THEORY; SERVICE LIFE; STRESS ANALYSIS;

MOSFET DEVICES;

EID: 0035308521     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.915682     Document Type: Article

References (33)

1. 2 energy barrier
2. Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs
3. A scaled 1.8 V, 0.18-μm gate length CMOS technology: Device design and reliability considerations
4. A study of hot-carrier degradation in n- and p-MOSFET's with ultra-thin gate oxides in the direct-tunneling regime
5. Hot carrier effects in short MOSFET's at low applied voltage
6. Monte Carlo study of sub-band-gap impact ionization in small silicon field-effect transistors
7. A high-performance 0.08 μm CMOS
8. 0.15 μm CMOS with high reliability and performance
9. Sub-100 mm nMOSFET with direct tunneling thermal nitrous oxides
10. A lifetime prediction method for hot-carrier degradation in surface-channel p-MOS devices
11. New hot-carrier degradation mode and lifetime prediction method in quarter-micrometer pMOSFET
12. NBTI-channel hot carrier effects in pMOSFET's in advanced CMOS technologies
13. Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing
14. Giant isotope effect in hot electron degradation of metal oxide silicon devices
15. Interfacial hardness enhancement in deuterium annealed 0.25 μm channel metal oxide semiconductor transistors
16. Effects of advanced processes on hot carrier reliability
17. A reliable approach to charge-pumping measurements in MOS transistors
18. Analytical study of the contribution of fast and slow oxide traps to the charge pumping current in MOS structures
19. An effective channel length determination method for LDD MOSFETs
20. d) during hot-carrier stressing of n-MOS transistors
21. Hot carrier effects in nMOSFET's in 0.1 μm CMOS technology
22. Performance and reliability assessment of dual-gate CMOS devices with gate oxide grown on nitrogen implanted Si substrates
23. Channel-width dependent hot-carrier degradation of thin-gate pMOSFETs
24. Three hot-carrier degradation mechanisms in deep-submicron pMOSFET
25. Hot-electron-induced MOSFET degradation - Model, monitor, and improvement
26. Two-carrier nature of interface state generation in hole trapping and radiation damage
27. Relationship between hole trapping and interface state generation in metal-oxide-silicon structures
28. 2 breakdown model for very low voltage lifetime extrapolation
29. Explanation of stress-induced damage in thin oxide
30. Generation of positive charge in silicon dioxide during avalanche and tunnel electron injection
31. On the hot hole induced post-stress interface trap generation in MOSFET's
32. Device reliability in analog CMOS applications
33. Anode hole injection versus hydrogen release: The mechanism for gate oxide breakdown