Self-heating effects on strained Si/SiGe n-HFETs

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Volumn , Issue , 2003, Pages 162-163

  Enciso, Mauro ^a   Aniel, Frederic ^a   Giguerre, Laurent ^a   Hackbarth, Thomas ^b   Herzog, Hans ^b   König, Ulf ^b   Hollander B ^c   Mantl , Siegfried ^c  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b DaimlerChrysler Research Center   (United States)

^c Institut fur Schichten und Gren zflachen   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; NOISE FIGURE; SEMICONDUCTOR DEVICES; SILICON; SILICON ALLOYS; TRANSPORT PROPERTIES;

DEVICE PERFORMANCE; FIGURES OF MERITS; HIGH FREQUENCY PERFORMANCE; NUMERIC SIMULATION; PARASITIC CAPACITANCE; PARASITIC RESISTANCES; SELF-HEATING EFFECT; VIRTUAL SUBSTRATES;

HEATING;

EID: 20344386558     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2003.1272042     Document Type: Conference Paper

References (9)

1. M Zeuner, et al.Sub-100mn Gate Technologies for Si/SiGe-Buried-Channel RF Devices", Jpn. J. Appl Phys., 42(4B), 2363-2366, 2003.
2. F Aniel, et al. "High performance 100 nm T-gate strained Si/Sio sGeoj n-MODFET", Salid State Electro, 47, 283-289, 2003.
3. M. Enciso-Aguiiar et al., "DC and high frequency performance of a 0.1 μm n-type Si/Si0.6 Ge 0.4MODFET wilh/uiy 198 GHz at 300 K and fmax = 230 GHz at 50 K", Elect. Letters, 39 (1), 149-151, 2003.
4. M. Encisoei et al. "0.3 dB minimum noise figure of 0.13 nm gate-length strained Si/Sin 5iGeo n-MODFETs", Elect Letters, vol. 37 (17), 1089-1090, 2001.
5. T. Hackbarth et al."High frequency n-type MODFETs on ultra-thin virtual SiGe substrates, Solid-Siuie Ekclmnws, Volume 47(7), 1179-1182, 2003.
6. M.Krummer et al. "Low energy plasma enhanced chemical vapor deposition1', Mat. Sc. and Eng. B89, 288, 2002.
7. Herzog, et al."Si/SiGe n-MODFETs on thin SiGe virtual substrates prepared by means of He implantation" IEEE Electron Device Lett., 23 (8), 485-487, 2002.
8. K. Lyutovich et al., "Thin SiGe buffers with high Oe content for n-MOSFETs", Mat Set. Eng. B89, 341, 2002.
9. K A Jenkings, K. Rim "Measurements of the Effect of Self-Heating tn Strained Silicon MOSFETs" IEEE Electron Dev.. 23(6), 360-362, 2002.