Ultra-thin, 1.0-3.0 nm, gate oxides for high performance sub-100 nm technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1998, Pages 222-223

  Sorsch, T ^a   Timp, W ^a   Baumann, F H ^a   Bogart, K H A ^a   Boone, T ^a   Donnelly, V M ^a   Green, M ^a   Evans Lutterodt, K ^a   Kim, C Y ^a   Moccio, S ^a   Rosamilia, J ^a   Sapjeta, J ^a   Silverman, P ^a   Weir, B ^a   Timp, G ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; OXIDATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; X RAY ANALYSIS;

ULTRATHIN GATE OXIDES;

MOSFET DEVICES;

EID: 0031645635     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)