Optimizing the hot carrier reliability of N-LDMOS transistor arrays

Microelectronics Reliability

Volumn 45, Issue 7-8, 2005, Pages 1021-1032

  Brisbin, Douglas ^a   Strachan, Andy ^a   Chaparala, Prasad ^a  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT DENSITY; GATES (TRANSISTOR); HOT CARRIERS; MATHEMATICAL MODELS; SWITCHING; THRESHOLD VOLTAGE;

FIELD OXIDE (FOX); POWER MANAGEMENTS; TRANSISTOR ARRAYS; VOLTAGE CONVERTERS;

MOSFET DEVICES;

EID: 20344373398     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.054     Document Type: Article

References (29)

1. A. Strachan A trench-isolated power BiCMOS process with complementary high performance vertical bipolars BCTM 2002 41
2. C. Kim Trenched sinker LDMOSFET (TS-LDMOS) structure for high power amplifier application above 2 GHz IEDM 2001 887
3. W. Nehrer The optimization of LBC6 power/mixed-signal BiCMOS process BCTM 2001 192
4. A. Moscatelli LDMOS implementation in a 0.35 μm BCD technology (BCD6) ISPSD 2000 323
5. K. Nakamura Complementary 25 V LDMOS for analog applications based on 0.6 μm BiCMOS technology BCTM 2000 94
6. K. Ehwald High performance RF LDMOS transistors with 5 nm gate oxide in a 0.25 μm SiGe:C BiCMOS technology IEDM 2001 895
7. S. Manzini Hot-electron-induced degradation in high-voltage submicron DMOS transistors ISPSD 1996 65
8. A.W. Ludikhuize Analysis of hot-carrier-induced degradation and snapback in submicron 50 V lateral MOS transistors ISPSD 1997 53
9. R. Versari Hot-carrier reliability in submicrometer LDMOS transistors IEDM 1997 371
10. E. Vandenbossche Modeling and simulation of hot carriers degradation of high voltage floating lateral NDMOS transistors Microelectron Reliab 2000 909
11. M. Shekar Hot electron degradation and unclamped inductive switching in submicron 60-V lateral DMOS IRPS 1998 383
12. X. Shuming RF LDMOS with extreme low parasitic feedback capacitance and high hot-carrier immunity IEDM 1999 201
13. R. Versari Experimental study of hot-carrier effects in LDMOS transistors IEEE Trans Electron Devices ED-46 1998 1128
14. V. O'Donovan Hot carrier reliability of lateral DMOS transistors IRPS 2000 174
15. A. Mouthaan Dealing with hot-carrier aging in NMOS and DMOS, models, simulations and characterizations Microelectron Reliab 2000 909
16. S. Manhas Early stage hot carrier degradation of state of-the-art LDD N-MOSFETs IRPS 2000 108
17. S. Manzini Avalanche injection of hot holes in the gate oxide of LDMOS transistors Microelectron Reliab 2000 1325
18. P. Moens A novel hot-hole injection degradation model for lateral NDMOS transistors IEDM 2001 877
19. P. Moens Competing hot carrier degradation mechanisms in lateral N-type DMOS transistors IRPS 2003 214
20. P. Moens Hot hole degradation effects in lateral N DMOS transistors IEEE Trans Electron Devices ED-51 2004 1704
21. A. Shibib Control of hot carrier degradation in LDMOS devices by a dummy gate field plate: experimental demonstration ISPSD 2004 233
22. D. Brisbin Design optimization of N-LDMOS transistor arrays for hot carrier lifetime enhancement IRPS 2003 608
23. A. Strachan Optimization of LDMOS array design for SOA and hot carrier lifetime ISPSD 2003 84
24. D. Brisbin 1-D and 2-D hot carrier layout optimization of N-LDMOS transistor arrays IRW 2002 120
25. D. Brisbin Hot carrier reliability of N-LDMOS transistor arrays for power BiCMOS applications IRPS 2002 105
26. D. Brisbin Hot-carrier reliability and design of N-LDMOS transistor arrays IRW 2001 44
27. P. Hower Snapback and safe operating area of LDMOS transistors IEDM 1999 193
28. P. Heremans Consistent model for hot-carrier degradation in n-channel and p-channel MOSFET's IEEE Trans Electron Devices ED-35 1988 2194
29. C. Hu Hot-electron-induced MOSFET degradation-model, monitor, and improvement IEEE Trans Electron Devices ED-32 1985 375