Control of hot carrier degradation in LDMOS devices by a dummy gate field plate: Experimental demonstration

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn 16, Issue , 2004, Pages 233-235

  Shibib, Ayman ^a   Xu, Shuming ^a   Xie, Zhijian ^a   Gammel, Peter ^a   Mastrapasqua, Marco ^a   Kizilyalli, Isik ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; HOT CARRIERS; STRESS ANALYSIS; SUBSTRATES;

BODY CURRENT; GATE FIELD PLATE; HOT CARRIER DEGRADATION; LDMOS DEVICES;

MOS DEVICES;

EID: 4944265152     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/wct.2004.239939     Document Type: Conference Paper

References (6)

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