High performance RF LDMOS transistors with 5nm gate oxide in a 0.25μm SiGe:C BiCMOS technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 895-898

  Ehwald, K E ^a   Heinemann, B ^a   Roepke, W ^a   Winkler, W ^a   Rucker H ^a   Fuernhammer, F ^a   Knoll, D ^a   Barth, R ^a   Hunger, B ^a   Wulf, H E ^a   Pazirandeh, R ^a   Ilkov, N ^a  

^a Motorola GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; LOGIC DEVICES; NATURAL FREQUENCIES; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE;

CUT OFF FREQUENCY; GATE OXIDE; POWER ADDED EFFICIENCY;

MOSFET DEVICES;

EID: 0035717524     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)