Snapback and safe operating area of Ldmos transistors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 193-196

  Hower, P L ^a   Lin, J ^a   Merchant, Steve ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; ELECTRIC FIELD EFFECTS; NEGATIVE RESISTANCE; THERMAL EFFECTS;

LDMOS TRANSISTORS; SAFE OPERATING AREA BOUNDARY; SNAPBACK;

MOSFET DEVICES;

EID: 0033347298     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)