Exerimental study of hotcarrier effects in ldmos transistors

IEEE Transactions on Electron Devices

Volumn 46, Issue 6, 1999, Pages 12281233-

  Versari, Roberto ^a   Pieracci, Augusto ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Degradation mechanisms; Device optimization; Hot carrier; LDMOS transistors

Indexed keywords

EID: 33747192253     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (20)

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