Hot hole degradation effects in lateral nDMOS transistors

IEEE Transactions on Electron Devices

Volumn 51, Issue 10, 2004, Pages 1704-1710

  Moens, Peter ^a   Van den Bosch, Geert ^b   De Keukeleire, Catherine ^a   Degraeve, Robin ^b   Tack, Marnix ^a   Groeseneken, Guido ^b,c  

^a ON SEMICONDUCTOR   (United States)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRON TRAPS; HOT CARRIERS; IMPACT IONIZATION; INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS;

DEGRADATION MODEL; HOT HOLE INJECTION; LDMOS TRANSISTORS; SATURATION EFFECTS;

MOSFET DEVICES;

EID: 5444222133     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.834913     Document Type: Article

References (12)

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