Analysis of hot-carrier-induced degradation and snapback in submicron 50 V lateral MOS transistors

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1997, Pages 53-56

  Ludikhuize, A W ^a   Slotboom, M ^a   Nezar, A ^a   Nowlin, N ^a   Brock, R ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; HOT CARRIERS; MOS DEVICES;

BACK GATE CURRENTS; SNAPBACK;

MOSFET DEVICES;

EID: 0030688695     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)