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Volumn , Issue , 2003, Pages 214-221

Competing hot carrier degradation mechanisms in lateral n-type DMOS transistors

Author keywords

Charge pumping; Competing mechanisms; Dit formation; Hole trapping; Hot carrier degradation; LDMOS; Model

Indexed keywords

ELECTRIC CHARGE; ELECTRON MOBILITY; HOT CARRIERS; SILICA;

EID: 0038649168     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (29)

References (23)
  • 1
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    • 16-60V rated LDMOS show advanced performance in an 0.72 μm evolution BiCMOS power technology
    • C.Y. Tsai et al., "16-60V Rated LDMOS Show Advanced Performance in an 0.72 μm Evolution BiCMOS Power Technology", Proceedings of the International Electron Devices Meeting (IEDM), 1997, pp367-370.
    • (1997) Proceedings of the International Electron Devices Meeting (IEDM) , pp. 367-370
    • Tsai, C.Y.1
  • 10
    • 0032138065 scopus 로고    scopus 로고
    • A new characterization method for hot-carrier degradation in DMOS transistors
    • A. Pieracci and B. Ricco, "A New Characterization Method for Hot-Carrier Degradation in DMOS Transistors", IEEE Transactions on Electron Devices, 45, (1998), pp1855-1858.
    • (1998) IEEE Transactions on Electron Devices , vol.45 , pp. 1855-1858
    • Pieracci, A.1    Ricco, B.2
  • 11
    • 0032665190 scopus 로고    scopus 로고
    • Experimental study of hot-carrier effects in LDMOS transistors
    • R. Versari and A. Pieracci, "Experimental Study of Hot-Carrier Effects in LDMOS Transistors", IEEE Transactions on Electron Devices, 46, (1999), pp1228-1233.
    • (1999) IEEE Transactions on Electron Devices , vol.46 , pp. 1228-1233
    • Versari, R.1    Pieracci, A.2
  • 13
    • 0033728126 scopus 로고    scopus 로고
    • Dealing with Hot-Carrier Aging in nMOS and DMOS: Models, simulations and characterizations
    • A.J. Mouthaan et al., "Dealing with Hot-Carrier Aging in nMOS and DMOS: Models, Simulations and Characterizations", Microelectronics Reliability, 40 (2000), pp909-917.
    • (2000) Microelectronics Reliability , vol.40 , pp. 909-917
    • Mouthaan, A.J.1
  • 18
    • 0024705114 scopus 로고
    • Analysis of the charge pumping technique and its applications for the evaluation of MOSFET degradation
    • P. Heremans et al., "Analysis of the Charge Pumping Technique and Its Applications for the Evaluation of MOSFET Degradation", IEEE Transactions on Electron Devices, 36, (1989), pp1318-1335.
    • (1989) IEEE Transactions on Electron Devices , vol.36 , pp. 1318-1335
    • Heremans, P.1
  • 22
    • 0035278429 scopus 로고    scopus 로고
    • A new degradation model and lifetime extrapolation technique for LDD nMOSFETs under hot-carrier degradation
    • R. Dreesen et al., "A New Degradation Model and Lifetime Extrapolation Technique for LDD nMOSFETs under Hot-Carrier Degradation", Microelectronics Reliability, 41, (2001), pp437-445.
    • (2001) Microelectronics Reliability , vol.41 , pp. 437-445
    • Dreesen, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.