Hot-electron-induced degradation in high-voltage submicron DMOS transistors

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1996, Pages 65-68

  Manzini, S ^a   Contiero, C ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; DEGRADATION; HOT CARRIERS; INTEGRATED CIRCUIT TESTING; SEMICONDUCTOR DEVICE MODELS;

HOT ELECTRON INDUCED DEGRADATION;

MOSFET DEVICES;

EID: 0029718328     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)