RF LDMOS with extreme low parasitic feedback capacitance and high hot-carrier immunity

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 201-204

  Xu, Shuming ^a   Foo, Pangdow ^a   Wen, Jianqing ^a   Liu, Yong ^a   Lin, Fujiang ^a   Ren, Changhong ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS; HOT CARRIERS; OXIDATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSMISSION ELECTRON MICROSCOPY;

HOT ELECTRON RESISTANCE; LDMOS TRANSISTOR; PARASITIC FEEDBACK CAPACITANCE;

MOSFET DEVICES;

EID: 0033306991     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)