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Volumn 2002-January, Issue , 2002, Pages 120-124

1-D and 2-D hot carrier layout optimization of N-LDMOS transistor arrays

Author keywords

[No Author keywords available]

Indexed keywords

MOS DEVICES; SEMICONDUCTOR JUNCTIONS; TRANSISTORS;

EID: 44949188233     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2002.1194247     Document Type: Conference Paper
Times cited : (3)

References (12)
  • 1
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    • A trench-isolated power BiCMOS process with complementary high performance vertical bipolars
    • A. Strachan et. al., "A Trench-Isolated Power BiCMOS Process with Complementary High Performance Vertical Bipolars", BCTM2002,p. 41
    • (2002) BCTM , vol.41
    • Strachan, A.1
  • 2
    • 0035717648 scopus 로고    scopus 로고
    • Trenched sinker LDMOSFET (TS-LDMOS) structure for high power amplifier application above 2 GHz
    • C. Kim et. al., "Trenched Sinker LDMOSFET (TS-LDMOS) Structure for High Power Amplifier Application above 2 GHz", lEDM2001,p. 887
    • (2001) LEDM , vol.887
    • Kim, C.1
  • 3
    • 0035163956 scopus 로고    scopus 로고
    • The optimization of LBC6 power/mixed-signal BICMOS process
    • W. Nehrer et. al., "The Optimization of LBC6 Power/Mixed-Signal BICMOS Process1', BCTM 2001, p. 192
    • (2001) BCTM , vol.192
    • Nehrer, W.1
  • 4
    • 0034448282 scopus 로고    scopus 로고
    • LDMOS implementation in a 0.35 um BCD technology (BCD6)
    • A. Moscatelli et. al., "LDMOS Implementation in a 0.35 um BCD Technology (BCD6)", ISPSD 2000, p. 323
    • (2000) ISPSD , pp. 323
    • Moscatelli, A.1
  • 5
    • 0002271598 scopus 로고    scopus 로고
    • Complementary 25V LDMOS for analog applications based on 0.6 um BiCMOS technology
    • K. Nakamura et. al., "Complementary 25V LDMOS for Analog Applications Based on 0.6 um BiCMOS Technology", BCTM 2000, p. 94
    • (2000) BCTM , pp. 94
    • Nakamura, K.1
  • 6
    • 0035717524 scopus 로고    scopus 로고
    • High performance RF LDMOS transistors with 5nm Gate oxide in a 0.25 um SiGe:C BiCMOS technology
    • K. Ehwald et. al., "High Performance RF LDMOS Transistors with 5nm Gate oxide in a 0.25 um SiGe:C BiCMOS Technology", IEDM 2001, p. 895
    • (2001) IEDM , pp. 895
    • Ehwald, K.1
  • 7
    • 0032665190 scopus 로고    scopus 로고
    • Experimental study of hot-carrier effects in LDMOS transistors
    • R. Versari et. at., "Experimental Study of Hot-Carrier Effects in LDMOS Transistors", IEEE Trans. Electron Devices", ED-46, p 1228, 1999
    • (1999) IEEE Trans. Electron Devices, ED , vol.46 , pp. 1228
    • Versari, R.1
  • 8
    • 0033733053 scopus 로고    scopus 로고
    • Hot carrier reliability of lateral DMOS transistors
    • V. O'Donovan et. al., "Hot Carrier Reliability of Lateral DMOS Transistors", IRPS 2000, p. 174
    • (2000) IRPS , pp. 174
    • O'Donovan, V.1
  • 9
    • 0033728126 scopus 로고    scopus 로고
    • Dealing with hot-carrier aging in nMOS and DMOS, models, simulations and characterizations
    • A. Mouthaan et. al., "Dealing with Hot-Carrier Aging in nMOS and DMOS, Models, Simulations and Characterizations", Microelectronics Reliability 2000, p. 909
    • (2000) Microelectronics Reliability , pp. 909
    • Mouthaan, A.1
  • 10
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    • A novel hot-hole injection degradation model for lateral nDMOS transistors
    • P. Moens et. al., "A Novel Hot-Hole Injection Degradation Model for Lateral nDMOS Transistors", IEDM 2001, p. 877
    • (2001) IEDM , pp. 877
    • Moens, P.1
  • 11
    • 0035565642 scopus 로고    scopus 로고
    • Hot carrier reliability and design of N- LDMOS transistors arrays
    • D. Brisbin et. al. "Hot Carrier Reliability and Design of N- LDMOS Transistors Arrays", IRW 2001, p. 44
    • (2001) IRW , pp. 44
    • Brisbin, D.1
  • 12
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    • Hot carrier reliability of N-LDMOS transistors arrays for power BiCMOS applications
    • D. Brisbin et. al. "Hot Carrier Reliability of N-LDMOS Transistors Arrays for Power BiCMOS Applications", IRPS 2002, p. 105
    • (2002) IRPS , pp. 105
    • Brisbin, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.