-
1
-
-
0042608225
-
Hot-carrier instability in IGFET's
-
Abbas S.A., Dockerty R.C. Hot-carrier instability in IGFET's. Appl Phys Lett. 27:1975;147-148.
-
(1975)
Appl Phys Lett
, vol.27
, pp. 147-148
-
-
Abbas, S.A.1
Dockerty, R.C.2
-
2
-
-
0029712880
-
LDMOS implementation by large tilt implant in 0.6 μ m BCD5 process, flash memory compatible
-
Contiero C, Galbiati P, Palmieri M, Vecchi L. LDMOS implementation by large tilt implant in 0.6 μ m BCD5 process, flash memory compatible. In: Proceedings of ISPSD '96. p. 75-8.
-
In: Proceedings of ISPSD '96
, pp. 75-78
-
-
Contiero, C.1
Galbiati, P.2
Palmieri, M.3
Vecchi, L.4
-
3
-
-
0029718328
-
Hot-electron-induced degradation in high-voltage submicron DMOS transistors
-
Manzini S, Contiero C. Hot-electron-induced degradation in high-voltage submicron DMOS transistors. In: Proceedings of ISPSD '96. p. 65-8.
-
In: Proceedings of ISPSD '96
, pp. 65-68
-
-
Manzini, S.1
Contiero, C.2
-
4
-
-
84886448041
-
Hot-carrier reliability in submicrometer LDMOS transistors
-
Versari R, Pieracci A, Manzini S, Contiero C, Riccò B. Hot-carrier reliability in submicrometer LDMOS transistors. In: Proceedings of IEDM '97. p. 371-4.
-
In: Proceedings of IEDM '97
, pp. 371-374
-
-
Versari, R.1
Pieracci, A.2
Manzini, S.3
Contiero, C.4
Riccò, B.5
-
5
-
-
0031639116
-
Hot-electron injection and trapping in the gate oxide of submicron DMOS transistors
-
Manzini S, Gallerano A, Contiero C. Hot-electron injection and trapping in the gate oxide of submicron DMOS transistors. In: Proceedings of ISPSD '98. p. 415-8.
-
In: Proceedings of ISPSD '98
, pp. 415-418
-
-
Manzini, S.1
Gallerano, A.2
Contiero, C.3
-
6
-
-
0032138065
-
A new characterization method for hot-carrier degradation in DMOS transistors
-
Pieracci A., Riccò B. A new characterization method for hot-carrier degradation in DMOS transistors. IEEE Trans Electron Devices. 45:1998;1855-1858.
-
(1998)
IEEE Trans Electron Devices
, vol.45
, pp. 1855-1858
-
-
Pieracci, A.1
Riccò, B.2
-
7
-
-
0030688695
-
Analysis of hot-carrier-induced degradation and snapback in submicron 50 V lateral MOS transistors
-
Ludikhuize AW, Slotboom M, Nezar A, Nowlin N, Brock R. Analysis of hot-carrier-induced degradation and snapback in submicron 50 V lateral MOS transistors. In: Proceedings of ISPSD '97. p. 53-6.
-
In: Proceedings of ISPSD '97
, pp. 53-56
-
-
Ludikhuize, A.W.1
Slotboom, M.2
Nezar, A.3
Nowlin, N.4
Brock, R.5
-
8
-
-
0030415670
-
Extraction of channel doping profile in DMOS transistors
-
Pieracci P, Lanzoni M, Galbiati P, Manzini S, Contiero C, Riccò B. Extraction of channel doping profile in DMOS transistors. In: Proceedings of IEDM '96. p. 485-8.
-
In: Proceedings of IEDM '96
, pp. 485-488
-
-
Pieracci, P.1
Lanzoni, M.2
Galbiati, P.3
Manzini, S.4
Contiero, C.5
Riccò, B.6
-
10
-
-
36849131222
-
Calculation of the space charge, electric field, and free carrier concentration at the surface of a semiconductor
-
Kingston R.H., Neustadter S.F. Calculation of the space charge, electric field, and free carrier concentration at the surface of a semiconductor. J Appl Phys. 26:1955;718-720.
-
(1955)
J Appl Phys
, vol.26
, pp. 718-720
-
-
Kingston, R.H.1
Neustadter, S.F.2
-
12
-
-
0016927127
-
Capture cross section and trap concentration of holes in silicon dioxide
-
Ning T.H. Capture cross section and trap concentration of holes in silicon dioxide. J Appl Phys. 47:1976;1079-1081.
-
(1976)
J Appl Phys
, vol.47
, pp. 1079-1081
-
-
Ning, T.H.1
-
14
-
-
0023329786
-
Hot-electron-induced punchthrough (HEIP) effect in submicrometer p-MOSFETs
-
Koyanagi M., Lewis A.G., Martin R.M., Huang T., Chen J.Y. Hot-electron-induced punchthrough (HEIP) effect in submicrometer p-MOSFETs. IEEE Trans Electron Devices. ED-34:1987;839-844.
-
(1987)
IEEE Trans Electron Devices
, vol.34
, pp. 839-844
-
-
Koyanagi, M.1
Lewis, A.G.2
Martin, R.M.3
Huang, T.4
Chen, J.Y.5
-
15
-
-
85031568687
-
-
Mastrorosa S. Private communication
-
Mastrorosa S. Private communication.
-
-
-
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