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Volumn 44, Issue 7, 2000, Pages 1325-1330

Avalanche injection of hot holes in the gate oxide of LDMOS transistors

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; DEGRADATION; HOT CARRIERS; OXIDES; THRESHOLD VOLTAGE;

EID: 0033732867     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00317-2     Document Type: Article
Times cited : (26)

References (15)
  • 1
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    • (1975) Appl Phys Lett , vol.27 , pp. 147-148
    • Abbas, S.A.1    Dockerty, R.C.2
  • 2
    • 0029712880 scopus 로고    scopus 로고
    • LDMOS implementation by large tilt implant in 0.6 μ m BCD5 process, flash memory compatible
    • Contiero C, Galbiati P, Palmieri M, Vecchi L. LDMOS implementation by large tilt implant in 0.6 μ m BCD5 process, flash memory compatible. In: Proceedings of ISPSD '96. p. 75-8.
    • In: Proceedings of ISPSD '96 , pp. 75-78
    • Contiero, C.1    Galbiati, P.2    Palmieri, M.3    Vecchi, L.4
  • 3
    • 0029718328 scopus 로고    scopus 로고
    • Hot-electron-induced degradation in high-voltage submicron DMOS transistors
    • Manzini S, Contiero C. Hot-electron-induced degradation in high-voltage submicron DMOS transistors. In: Proceedings of ISPSD '96. p. 65-8.
    • In: Proceedings of ISPSD '96 , pp. 65-68
    • Manzini, S.1    Contiero, C.2
  • 5
    • 0031639116 scopus 로고    scopus 로고
    • Hot-electron injection and trapping in the gate oxide of submicron DMOS transistors
    • Manzini S, Gallerano A, Contiero C. Hot-electron injection and trapping in the gate oxide of submicron DMOS transistors. In: Proceedings of ISPSD '98. p. 415-8.
    • In: Proceedings of ISPSD '98 , pp. 415-418
    • Manzini, S.1    Gallerano, A.2    Contiero, C.3
  • 6
    • 0032138065 scopus 로고    scopus 로고
    • A new characterization method for hot-carrier degradation in DMOS transistors
    • Pieracci A., Riccò B. A new characterization method for hot-carrier degradation in DMOS transistors. IEEE Trans Electron Devices. 45:1998;1855-1858.
    • (1998) IEEE Trans Electron Devices , vol.45 , pp. 1855-1858
    • Pieracci, A.1    Riccò, B.2
  • 10
    • 36849131222 scopus 로고
    • Calculation of the space charge, electric field, and free carrier concentration at the surface of a semiconductor
    • Kingston R.H., Neustadter S.F. Calculation of the space charge, electric field, and free carrier concentration at the surface of a semiconductor. J Appl Phys. 26:1955;718-720.
    • (1955) J Appl Phys , vol.26 , pp. 718-720
    • Kingston, R.H.1    Neustadter, S.F.2
  • 12
    • 0016927127 scopus 로고
    • Capture cross section and trap concentration of holes in silicon dioxide
    • Ning T.H. Capture cross section and trap concentration of holes in silicon dioxide. J Appl Phys. 47:1976;1079-1081.
    • (1976) J Appl Phys , vol.47 , pp. 1079-1081
    • Ning, T.H.1
  • 13
    • 0028466692 scopus 로고
    • A model for the time- And bias-dependence of p-MOSFET degradation
    • Brox M., Schwerin A., Wang Q., Weber W. A model for the time- and bias-dependence of p-MOSFET degradation. IEEE Trans Electron Devices. 41:1994;1184-1195.
    • (1994) IEEE Trans Electron Devices , vol.41 , pp. 1184-1195
    • Brox, M.1    Schwerin, A.2    Wang, Q.3    Weber, W.4
  • 15
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    • Mastrorosa S. Private communication
    • Mastrorosa S. Private communication.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.