Dealing with hot-carrier aging in nMOS and DMOS, models, simulations and characterizations

Microelectronics Reliability

Volumn 40, Issue 6, 2000, Pages 909-917

  Mouthaan, A J ^a   Salm, C ^a   Lunenborg, M M ^b   De Wolf, M A R C ^b   Kuper, F G ^a,b  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; COMPUTER SIMULATION; HOT CARRIERS; SEMICONDUCTOR DEVICE MODELS;

CIRCUIT AGING SIMULATION;

MOSFET DEVICES;

EID: 0033728126     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00252-8     Document Type: Article

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