메뉴 건너뛰기




Volumn 47, Issue 12, 2000, Pages 2392-2398

Iron contamination in silicon wafers measured with the pulsed MOS capacitor generation lifetime technique

Author keywords

Impurities; Mos capacitors; Semiconductor materials; Semiconductors; Semicondutctor device measurements; Silicon

Indexed keywords


EID: 1942463142     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.887027     Document Type: Article
Times cited : (6)

References (34)
  • 5
    • 13044306741 scopus 로고    scopus 로고
    • in Recombination Lifetime Measurements in Silicon, D. C. Gupta, F. R. Bacher, and W. M. Hughes, Eds: Amer. Soc. Testing and Materials, 1998, vol. ASTM STP 1340, pp. 259-267.
    • A. Kempf et al., "Influence of iron and copper on minority carrier recombination lifetime in silicon," in Recombination Lifetime Measurements in Silicon, D. C. Gupta, F. R. Bacher, and W. M. Hughes, Eds: Amer. Soc. Testing and Materials, 1998, vol. ASTM STP 1340, pp. 259-267.
    • "Influence of iron and copper on minority carrier recombination lifetime in silicon,"
    • Kempf, A.1
  • 19
    • 33747406816 scopus 로고    scopus 로고
    • in Defects and Radiation Effects in Semiconductors 1980, ser. Inst. Phys. Conf. Ser. 59, 1981, pp. 217-222.
    • L. C. Kimerling, J. L. Benton, and J. J. Rubin, "Transition metal impurities in silicon," in Defects and Radiation Effects in Semiconductors 1980, ser. Inst. Phys. Conf. Ser. 59, 1981, pp. 217-222.
    • "Transition Metal Impurities in Silicon,"
    • Kimerling, L.C.1    Benton, J.L.2    Rubin, J.J.3
  • 25
    • 33747419764 scopus 로고    scopus 로고
    • in Recombination Lifetime Measurements in Silicon, D. C. Gupta, F. R. Bacher, and W. M. Hughes, Eds: Amer. Soc. Testing Mater., 1998, pp. 31-44.
    • G. Zoth, "Aspects of silicon contamination control by lifetime measurements," in Recombination Lifetime Measurements in Silicon, D. C. Gupta, F. R. Bacher, and W. M. Hughes, Eds: Amer. Soc. Testing Mater., 1998, pp. 31-44.
    • "Aspects of Silicon Contamination Control by Lifetime Measurements,"
    • Zoth, G.1
  • 26
    • 0019703133 scopus 로고    scopus 로고
    • in Semiconductor Silicon 1981, H. R. Huff, R. J. Kriegler, and Y Takeishi, Eds. Pennington, NJ: Electrochem. Soc., 1981, pp. 331-343.
    • K. Graff and H. Pieper, "The behavior of transition and noble metals in silicon crystals," in Semiconductor Silicon 1981, H. R. Huff, R. J. Kriegler, and Y Takeishi, Eds. Pennington, NJ: Electrochem. Soc., 1981, pp. 331-343.
    • "The Behavior of Transition and Noble Metals in Silicon Crystals,"
    • Graff, K.1    Pieper, H.2
  • 31
    • 0030259841 scopus 로고    scopus 로고
    • Kohnoetat., Jpn. J. Appl. Phys., vol. 35, pp. 5539-5544, Oct. 1996.
    • M. Kohnoetat., "Noncontact measurement of generation lifetime,"Jpn. J. Appl. Phys., vol. 35, pp. 5539-5544, Oct. 1996.
    • "Noncontact Measurement of Generation Lifetime,"


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.