Identification possibility of metallic impurities in p-type silicon by lifetime measurement

Journal of the Electrochemical Society

Volumn 143, Issue 1, 1996, Pages 216-220

  Horanyi T S ^a   Tutto P ^a   Kovacsics, Cs ^a  

^a SEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CALCULATIONS; CHROMIUM; CONCENTRATION (PROCESS); CORRELATION THEORY; ELECTRIC CONDUCTIVITY; HEAT TREATMENT; IMPURITIES; IRON; MEASUREMENTS; PHOTOCONDUCTIVITY;

CHEMICAL SURFACE PASSIVATION; COMPUTER CONTROLLED MOTORS; LIFETIME MEASUREMENT; LIFETIME SCANNER SYSTEMS; METALLIC IMPURITIES; MICROWAVE DETECTED PHOTOCONDUCTIVE DECAY LIFETIME MEASUREMENT METHOD; X RAY MAPPING;

SEMICONDUCTING SILICON;

EID: 0029734899     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836411     Document Type: Article

References (11)

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