Field-enhanced carrier generation in MOS capacitors

Solid State Electronics

Volumn 17, Issue 10, 1974, Pages 1001-1011

  Calzolari, P U ^a   Graffi, S ^a   Morandi, C ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS;

SEMICONDUCTOR DEVICES, MIS;

EID: 0016114553     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(74)90139-7     Document Type: Article

References (39)

1. On the determination of minority carrier lifetime from the transient response of an MOS capacitor
2. Minority carrier lifetime determination from inversion layer transient response
3. Different mechanisms affecting the inversion layer transient response
4. Measuring the lifetime of minority carriers in MIS structures
5. On the deeply depleted MOS capacitor
6. Bulk lifetime determination using an MOS capacitor
7. Transient responses of a pulsed MIS-capacitor
8. A linear-sweep MOS-C technique for determining minority carrier lifetimes
9. On the Determination of Minority Carrier Lifetime and Surface Recombination Velocity from the Transient Response of MOS Capacitors
10. Bulk and optical generation parameters measured with the pulsed MOS capacitor
11. LVII.On the electrical conductivity of some dielectrics
12. On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors
13. Use of HCl Gettering in Silicon Device Processing
14. Surface-state density at the (hydrogen-chloride) oxide-silicon interface