Novel approach to evaluation of charging on semiconductor surface by noncontact, electrode-free capacitance/voltage measurement

Japanese Journal of Applied Physics

Volumn 33, Issue 4R, 1994, Pages 1823-1830

  Hirae, Sadao ^a   Kohno, Motohiro ^a   Okada, Hiroshi ^a   Matsubara, Hideaki ^a   Nakatani, Ikuyoshi ^a   Kusuda, Tatsufumi ^a   Sakai, Takamasa ^a  

^a DAINIPPON SCREEN MFG CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CHARGED PARTICLES; ELECTRIC SPACE CHARGE; ION IMPLANTATION; PLASMAS; PROM; SEMICONDUCTOR MATERIALS;

CHARGING DAMAGE; MAIS CAPACITOR; METAL AIR INSULATOR SEMICONDUCTOR; METAL NITRIDE OXIDE SEMICONDUCTOR; METAL OXIDE SEMICONDUCTOR; NET CHARGING DENSITY; NONCONTACT METHOD; PLASMA EXPOSURES; SEMICONDUCTING SURFACE CHARGING; TOP OXIDE SURFACE;

SURFACE PHENOMENA;

EID: 0028422350     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.33.1823     Document Type: Article

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