SCOPUS 정보 검색 플랫폼

Volumn 116, Issue 1-3, 1983, Pages 297-300

Electronically controlled reactions of interstitial iron in silicon

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

EID: 21544463903 PISSN: 03784363 EISSN: None Source Type: Journal
DOI: 10.1016/0378-4363(83)90263-2 Document Type: Article

Times cited : (185)

References (18)

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- Ludwig¹ Woodbury²

3
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- Proc. 15th Int. Conf. Physics of Semiconductors
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- Weber¹ Wagner²

4
- 0018516753
- Photodegradation in silicon
- (1980) Solar Cells , vol.2 , pp. 11
- Corbett¹ Jaworowski² Kleinhenz³ Pierce⁴ Wilsey⁵

5
- 84913783347
- Defects in Semiconductors
- North Holland, New York
- (1981) MRS Proc. 2 , pp. 85
- Kimerling¹

6
- 0003140644
- Defects and Radiation Effects in Semiconductors 1980
- (1981) Inst. Phys. Conf. Ser. 59 , pp. 217
- Kimerling¹ Benton² Rubin³

7
- 3342989192
- The Electrochem. Soc, Pennington, N. J
- (1981) Semiconductor Silicon 1981 , pp. 331
- Graff¹ Pieper²

8
- 0347405083
- Laser and Electron-Beam Interactions with Solids
- North Holland, New York
- (1982) MRS Proc. 4 , pp. 765
- Benton¹ Celler² Jacobson³ Kimerling⁴ Lischner⁵ Miller⁶ Robinson⁷

9
- 0020114123
- Interstitial iron and iron-acceptor pairs in silicon
- v ≅ 0.39eV by reference 7 and by, This level is spectroscopically denoted H(0.46) in this work, reflecting the observed activation energy for hole emission to the valence band of 0.46 eV. This activation energy corresponds to the approximate level position.
- (1982) Applied Physics A Solids and Surfaces , vol.27 A , pp. 207
- Wunstel¹ Wagner²

11
- 0001304341
- - acceptor have been shown to play a role in the gettering of transition metal contaminants by high concentration phosphorus diffused region.
- (1975) J. Phys. Chem. Sol. , vol.36 , pp. 731
- Meek¹ Seidel²

16
- 84913755923
- i). However, these species are not equilibrium entities. They are only observed following electron bombardment and are more correctly regarded as defect-impurity complexes.

18
- 84913782635
- i) are determined to be in second neighbor positions from the extent of the initial rate. Longer times of the same injection treatment yield 100% distant pairs, confirming the phenomenon of injection stimulated diffusion of isolated interstitial iron.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.