Influence of metal impurities on leakage current of si n+ p diode

Japanese Journal of Applied Physics

Volumn 30, Issue 2B, 1991, Pages L295-L297

  Miyazaki, Morimasa ^a   Sano, Masakazu ^a   Sumita, Shigeo ^a   Fujino, Nobukatsu ^a  

^a Kyushu Electronic Metal Co Ltd ^*  (Japan)

Author keywords

Cu; Dislocations; Fe; Leakage current; Metallic contamination; Ni; Optical microscope; Si N+ P diode; SIMS; TEM

Indexed keywords

MICROSCOPIC EXAMINATION - TRANSMISSION ELECTRON MICROSCOPY;

LEAKAGE CURRENT; METALLIC CONTAMINATION;

SEMICONDUCTOR DIODES;

EID: 0026105748     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.30.L295     Document Type: Article

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