Investigations on field enhanced generation in semiconductors

Solid State Electronics

Volumn 30, Issue 6, 1987, Pages 607-613

  Rabbani, K S ^a  

^a UNIVERSITY OF DHAKA   (Bangladesh)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS;

BULK DEFECTS; FIELD ENHANCED GENERATION; GATED DIODE; MOS CAPACITANCE; POOLE-FRENKEL THEORY;

SEMICONDUCTOR DEVICES, MOS;

EID: 0023365135     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(87)90219-X     Document Type: Article

References (20)

1. On the determination of minority carrier lifetime from the transient response of an MOS capacitor
2. On the deeply depleted MOS capacitor