On the separation of bulk and surface components of lifetime using the pulsed MOS capacitor

Solid State Electronics

Volumn 13, Issue 5, 1970, Pages 577-582

  Schroder, D K ^a   Nathanson, H C ^a  

^a Westinghouse Research & Development Cent   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CAPACITORS; SEMICONDUCTOR DEVICES;

EID: 0014778926     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(70)90138-3     Document Type: Article

References (8)

1. On the determination of minority carrier lifetime from the transient response of an MOS capacitor
2. Minority carrier lifetime determination from inversion layer transient response
3. Zu Relaxationseffekten bei epitaktischen Si-MOS-Strukturen
4. Different mechanisms affecting the inversion layer transient response