Application of minority carrier lifetime techniques in modern CZ silicon

ASTM Special Technical Publication

Volumn , Issue 1340, 1998, Pages 226-249

  Falster, Robert ^a   Borionetti, Gabriella ^a  

^a MEMC Electronic Materials SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CONTAMINATION; CRYSTAL DEFECTS; MICROWAVES; OXYGEN; PHOTOCONDUCTIVITY; PRECIPITATION (CHEMICAL); SURFACES; TRANSITION METALS; VELOCITY;

CZOCHRALSKI SILICON; INJECTION LEVEL CONTROL; INTRINSIC POINT DEFECT REACTIONS; MICROWAVE PHOTOCONDUCTIVE DECAY; MINORITY CARRIER RECOMBINATION LIFETIME MEASUREMENT; OXYGEN CLUSTERING; SURFACE RECOMBINATION VELOCITY MEASUREMENT; ULTRA LONG CARRIER LIFETIMES;

SEMICONDUCTING SILICON;

EID: 13044278909     PISSN: 10403094     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1520/stp15708s     Document Type: Article

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