Bulk and Optical Generation Parameters Measured with the Pulsed MOS Capacitor

IEEE Transactions on Electron Devices

Volumn 19, Issue 9, 1972, Pages 1018-1023

  Schroder, Dieter K ^a  

^a Westinghouse Research & Development Cent   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038657178     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1972.17538     Document Type: Article

References (7)

1. D. K. Schroder and J. Guldberg, “Interpretation of surface and bulk effects using the pulsed MIScapacitor”, Solid-State Electron vol. 14. pp. 1285–1297. Dec. 1971.
2. C.-T. Sah, “Effect of surface recombination and channel on p-n junction and transistor characteristics”, IRE Trans. Electron Devices. vol. ED-9. pp. 94–108. Jan. 1962.
3. M. Zerbst, “Relaxation effects at semiconductor-insulator interfaces” (in German), Z. Angew. Phys., vol. 22, pp. 30–33, May 1966.
4. D. E. Sawyer and K. H. Rediker, “Narrow base germanium photodiodes”, Proc. IRE (SPecial Issue on Transistors), vol. 46, pp. 1122–1130, June 1958.
5. F. P. Heiman, “On the determination of minority carrier lifetime from the transient response of an MOS capacitor”, IEEE Trans. Electron Devices, vol. ED-14, pp. 781–784, Nov. 1967.
6. S. M. Sze, Physics of Semiconductor Devices, New York: Wiley, 1969, pp, 430–433.
7. T. M. Buck, H. C. Casey, J. V. Dalton, and M. Yamin, “Influence of bulk and surface properties on image sensing silicon diode arrays”, Bell Syst. Tech. J., vol. 47, pp. 1827–1854, Nov. 1968.