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Volumn 81-5, Issue , 1981, Pages 331-343
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BEHAVIOR OF TRANSITION AND NOBLE METALS IN SILICON CRYSTALS.
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Author keywords
[No Author keywords available]
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Indexed keywords
DEFECT CONCENTRATION;
ELECTRICALLY ACTIVE DEFECTS DETECTION;
HAZE FORMATION;
NOBLE METALS;
SOLUBILITY AND DIFFUSION COEFFICIENTS OF THE 3RD TRANSITION METALS;
TRANSIENT CAPACITY METHOD (DLTS);
TRANSITION METALS;
SEMICONDUCTING SILICON;
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EID: 0019703133
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (38)
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References (0)
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