Corona-oxide-semiconductor device characterization

Solid-State Electronics

Volumn 42, Issue 4, 1998, Pages 505-512

  Schroder, D K ^a   Fung, M S ^b   Verkuil, R L ^c   Pandey, S ^a   Howland, W H ^c   Kleefstra, M ^c  

^a Arizona State University   (United States)

^b MiCRUS   (United States)

^c Keithley Instruments Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CORONA; ELECTRIC POTENTIAL; ELECTRON TRAPS; HOLE TRAPS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

CARRIER LIFETIME; CORONA-OXIDE-SEMICONDUCTOR (COS) DEVICES; INTERFACE CHARGE DENSITY;

MOS DEVICES;

EID: 0032042721     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00206-2     Document Type: Article

References (13)

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2. Verkuil, R. L. and Fung, M. S., Contactless Silicon Doping Measurements by Means of a Corona-Oxide-Semiconductor (COS) Technique, Extended Abstracts, Electrochem. Soc. Meet., Chicago, IL, 1988.
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