Progress in nanoscale piezoresponse force microscopy on ferroelectrics

Wuji Cailiao Xuebao/Journal of Inorganic Materials

Volumn 20, Issue 2, 2005, Pages 257-266

  Yu, Han Feng ^a   Zeng, Hua Rong ^a   Chu, Rui Qing ^a   Li, Guo Rong ^a   Yin, Qing Rui ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

Ferroelectric domain; Local property; Nanoscale; Piezoresponse force microscopy

Indexed keywords

BARIUM TITANATE; ELECTRIC FIELD EFFECTS; FERROELECTRICITY; LEAKAGE CURRENTS; PIEZOELECTRICITY;

CONVERSE PIEZOELECTRIC EFFECTS; FERROELASTICITY; FERROELECTRIC DOMAIN; LASER BEAM DETECTION; NANOSCALE; PIEZORESPONSE FORCE MICROSCOPY; STRESS FIELDS; TEMPERATURE FIELDS; THREE DIMENSIONAL IMAGE; TIME FIELDS;

FERROELECTRIC MATERIALS;

EID: 18044385347     PISSN: 1000324X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (62)

1. Araujo C A, Cuchiaro J D, McMillan L D, et al. Nature (London), 1995, 374: 627-629.
2. Lee J J, Thio C L, Desu S B. Phys. Status Solidi, 1995, A151: 171-182.
3. Scott J F, Araujo C A. Science, 1989, 246: 1400-1405.
4. Merz W J. Phys. Rev., 1954, 95: 690-698.
5. Hooton J A, Merz W J. Phys. Rev., 1955, 98: 409-413.
6. Park B M, Chung S J, Kim H S, et al. Philosophical Magazine, 1997, A75: 611-620.
7. Robinson G Y, White R M. Appl. Phys. Lett., 1967, 10: 320-323.
8. Miao S, Zhu J, Zhang X W. Phys. Rev., 2002, B65: 052101/1-052101/4.
9. Zhang B Y, Jiang F M, Yang Y, et al. J. Appl. Phys., 1996, 80: 1916-1918.
10. Yin Q R, Yang Y, Zhang B Y, et al. Journal of the Korean Physical Society, 1998, 32: 719-723.
11. Tirhomirova N A, Pikin S A, Shuvalov L A, et al. Ferroelectrics, 1980, 29: 145-156.
12. Fl?rsheimer M, Paschotta Q, Kubitscheck U, et al. Appl. Phys., 1998, B67: 593-599.
13. Franke K, Besold J, Haessler W, et al. Surf. Sci. Lett., 1994, 302: L283-L288.
14. Takata K, Kushida K, Torii K, et al. Jpn. J. Appl. Phys., 1994, 33: 3193-3196.
15. Luthi R, Haefke H, Meyer K P, et al. J. Appl. Phys., 1993, 74 (12): 7461-7471.
16. Okino H, Ida T, Ebihara H, et al. Jpn. J. Appl. Phys., 2001, 40: 5828-5832.
17. Loppacher Ch, Schlaphof F, Schneider S, et al. Surface Science, 2003, 532-535: 483-487
18. Abplanalp M, Eng L M, Günter P. Appl. Phys., 1998, A66: S231-S234.
19. Ganpule C S, Nagarajan V, Hill B K, et al. J. Appl. Phys., 2002, 91 (3): 1477-1481.
20. Roelofs A, Bottger U, Waser R, et al. Appl. Phys. Lett., 2000, 77 (21): 3444-3447.
21. Eng L M, Guntherodt H J, Schneider G A, et al. Appl. Phys. Lett., 1999, 74 (2): 233-235.
22. Eng L M. Nanotechnology, 1999, 10: 405-411.
23. Liu T, Lynch C S. Acta Materials, 2003, 51: 407-416.
24. Ganpule, C S, Nagaraian V, Ogale S B, et al. Appl. Phys. Lett., 2000, 77 (20): 3275-3277.
25. Orlik X K, Likodimos V, Pardi L. Appl. Phys. Lett., 2000, 76 (10): 1321-1323.
26. Kalinin S V, Bonnell D A. Appl. Phys. Lett., 2001, 78 (8): 1116-1118.
27. Muñoz-Saldaña J, Schneider G A, Eng L M. Surface Science, 2001, 480: L402-410.
28. Zavala G, Fendler J H, McKinstry S T. J. Appl. Phys., 1997, 81 (11): 7480-7491.
29. Durkan C, Welland M E. Ultramicroscopy, 2000, 80: 141-148.
30. Lin H N, Chen S H, Ho S T, et al. J. Vac. Sic. Technol., 2003, 21 (2): 916-918.
31. Gruverman A, Kholkin A, Kingon A, et al. Appl. Phys. Lett., 2001, 78 (18): 2751-2753.
32. Abplanalp M, Fousek J, Gunter P. Phys. Rev. Lett., 2001, 86: 5799-5802.
33. Zavala G, Fendler J H, Mckinstry S T. J. Korean Phys. Soc., 1998, 32: 1464-1467.
34. Labardi M, Polop C, Likodimos V, et al. Appl. Phys. Lett., 2003, 83 (10): 2028-2030.
35. Harnagea C, Alexe M, Hesse D, et al. Appl. Phys. Lett., 2003, 83 (2): 338-340.
36. Kalinin S V, Bonnell D A. J. Mater. Res., 2002, 17 (5): 936-939.
37. Abplanalp M, Gunter P. Proceedings of the Eleventh IEEE International Symposium on Applications of Ferroelectrics, 1998. 423-426.
38. Abplanalp M, Barošová D, Bridenbaugh P, et al. Solid State Communications, 2001, 119: 7-12.
39. Eng L M, Güntherodt H J, Roseman G, et al. J. Appl. Phys., 1998, 83 (11): 5973-5977.
40. Roelofs A, Pertsev N A, Waser R, et al. Appl. Phys. Lett., 2002, 80 (8): 1424-1426.
41. Zybill C E, Boubekeur H, Radojkovic P, et al. Surf. Sci., 1999, 440: 221-230.
42. Roelofs A, Schneller T, Szot K, et al. Appl. Phys. Lett., 2002, 81: 5231-5233.
43. Kalinin S V, Bonnell D A. Appl. Phys. Lett., 2001, 78 (8): 1116-1118.
44. Likodimos V, Orlik X K, Pardi L, et al. J. Appl. Phys., 2000, 87 (1): 443-451.
45. Likodimos V, Labardi M, Allegrini M, et al. Surface Science, 2001, 490: 76-84.
46. Gruverman A, Auciello O, Tokumoto H. Annu. Rev. Mater. Sci., 1998, 28: 101-123.
47. Saya Y, Watanabe S, Kawai M, et al. Jpn. J. Phys., 2000, 39: 3799-3803.
48. Kelmana M B, Mclntyreb P C, Hendrix B C, et al. J. Appl. Phys., 2003, 93 (11): 9231-9236.
49. Kholkin A L, Shvartsman V V, Emelyanov A Y, et al. Appl. Phys, Lett., 2003, 82 (13): 2127-2129.
50. Fu D, Suzuki K, Kato K, et al. Appl. Phys. Lett., 2003, 82 (13): 2130-2132.
51. Fu D, Suzuki K, Kato K, et al. Jpn. J. Appl. Phys., 2002, 42: 6724-6729.
52. Li Y L, Hu S Y, Liu Z K, et al. Acta Materialia, 2002, 50: 395-411.
53. Auciello O, Gruverman A, Tokumoto H, et al. MRS Bulletin, 1998, 1: 33-41.
54. Ganpule C S, Nagarajan V, Li H, et al. Appl. Phys. Lett., 2000, 77 (2): 292-294.
55. Yan F, Bao P, Chan H L, et al. Thin Solid Films, 2002, 406: 282-285.
56. Guo H Y, Xu J B, Wilson I H, et al. Appl. Phys. Lett., 2002, 81 (4): 715-717.
57. Nagarajan V, Roytburd A, Stanishevisky A, et al. Nature Materials, 2003, 2: 43-47.
58. Harnagea Catalin. Ph. D. thesis, Martin Luther University, Germany, 2001.
59. Haranagea C, Pignolet A, Alexe M, et al. Integrated Ferroelectrics, 2001, 44: 113-124.
60. Eng L M, Friedrich M, Fousek J, et al. Ferroelectrics, 1996, 186: 49-52.
61. Xie Z, Luo E Z, Xu J B. Appl. Phys. Lett., 2000, 76 (14): 1923-1925.
62. Xie Z, Luo E Z, Peng H B, et al. Journal of Non-crystalline Solids, 1999, 254: 112-117.