The grain size effect of Pb(Zr0.3Ti0.7)O3 thin films

Thin Solid Films

Volumn 406, Issue 1-2, 2002, Pages 282-285

  Yan, Feng ^a,b,c   Bao, Peng ^a   Chan, Helen L W ^b   Choy, Chung Loong ^b   Wang, Yening ^a  

^a NANJING UNIVERSITY   (China)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Dielectric properties; Domain wall; Ferroelectric properties; Interfaces

Indexed keywords

ELECTRIC SPACE CHARGE; ELECTRODES; FATIGUE OF MATERIALS; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); LEAD COMPOUNDS; PERMITTIVITY; POINT DEFECTS;

DOMAIN WALLS;

FERROELECTRIC THIN FILMS;

EID: 0037051215     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01745-X     Document Type: Article

References (16)