Study of domain stability on (Pb0.76Ca0.24)TiO 3 thin films using piezoresponse microscopy

Applied Physics Letters

Volumn 81, Issue 4, 2002, Pages 715-717

  Guo, H Y ^a   Xu, J B ^a   Wilson, I H ^a   Xie, Z ^a   Luo, E Z ^a   Hong, Seungbum ^b   Yan, H ^c,d  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^d BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS MODE; DOMAIN-SWITCHING PROCESS; LOCAL HYSTERESIS LOOPS; PIEZOELECTRIC HYSTERESIS LOOPS; PIEZORESPONSE; PULSE MODES; PULSE WIDTH; STABILITY ISSUES; TIO;

HYSTERESIS; LEAD; PIEZOELECTRICITY; SWITCHING; THIN FILMS;

HYSTERESIS LOOPS;

EID: 79956058248     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1494122     Document Type: Article

References (20)

1. A. Gruverman and M. Tanaka, J. Appl. Phys. 89, 1836 (2001). jap JAPIAU 0021-8979
2. O. Lohse, M. Grossmann, U. Boettger, D. Bolten, and R. Waser, J. Appl. Phys. 89, 2332 (2001). jap JAPIAU 0021-8979
3. V. Gopalan and T. E. Mitchell, J. Appl. Phys. 83, 941 (1998). jap JAPIAU 0021-8979
4. S. Hong, J. Woo, H. Shin, J. U. Jeon, Y. E. Pak, E. L. Colla, N. Setter, E. Kim, and K. No, J. Appl. Phys. 89, 1377 (2001). jap JAPIAU 0021-8979
5. J. A. Christman, R. R. Woolcott, Jr., A. I. Kingon, and R. J. Nemanich, Appl. Phys. Lett. 73, 3851 (1998). apl APPLAB 0003-6951
6. W. J. Merz, Phys. Rev. 95, 690 (1954). phr PHRVAO 0031-899X
7. J. F. Scott, L. Kammerdiner, M. Parries, S. Traynor, V. Ottenbacher, and W. F. Oliver, J. Appl. Phys. 64, 787 (1988). jap JAPIAU 0021-8979
8. M. E. Lines and A. M. Glass, Principles and Applications of Ferroelectrics and Related Materials (Clarendon, Oxford, 1977).
9. R. R. Mehta, B. D. Silverman, and J. T. Jacobs, J. Appl. Phys. 44, 3379 (1973). jap JAPIAU 0021-8979
10. J. Woo, S. Hong, N. Setter, H. Shin, J. U. Jeon, Y. E. Pak, and K. No, J. Vac. Sci. Technol. B 19, 818 (2001). jvb JVTBD9 0734-211X
11. Y. Yamashita, K. Yokoyama, H. Honda, and T. Takahashi, Jpn. J. Appl. Phys., Suppl. 20-24, 183 (1981). jja JJAPA5 0021-4922
12. K. Uchino and K. Y. Oh, J. Am. Ceram. Soc. 74, 1131 (1991). jac JACTAW 0002-7820
13. K. M. Rittenmyer and R. Y. Ting, Ferroelectrics 110, 171 (1990). fer FEROA8 0015-0193
14. A. L. Kholkin, A. Seifert, and N. Setter, Appl. Phys. Lett. 72, 3374 (1998). apl APPLAB 0003-6951
15. A. L. Kholkin, M. L. Calzada, P. Ramos, J. Mendiola, and N. Setter, Appl. Phys. Lett. 69, 3602 (1996). apl APPLAB 0003-6951
16. H. Y. Guo, J. B. Xu, I. H. Wilson, Z. Xie, and E. Z. Luo, Phys. Lett. A 294, 217 (2002). pla PYLAAG 0375-9601
17. Z. Xie, E. Z. Luo, J. B. Xu, I. H. Wilson, H. B. Peng, L. H. Zhao, and B. R. Zhao, Appl. Phys. Lett. 76, 1923 (2000). apl APPLAB 0003-6951
18. Y. Ishibashi and Y. Takagi, J. Phys. Soc. Jpn. 31, 506 (1971). jup JUPSAU 0031-9015
19. J. F. Scott, Ferroelectric Memories (Springer, Berlin, 2000).
20. R. Landauer, J. Appl. Phys. 28, 227 (1957). jap JAPIAU 0021-8979