Deposition of GaSb films from the single-source precursor [t-Bu 2GaSbEt2]2

Chemistry of Materials

Volumn 17, Issue 8, 2005, Pages 1982-1989

  Schulz, Stephan ^a   Fahrenholz, Sonja ^a   Kuczkowski, Andreas ^a   Assenmacher, Wilfried ^a   Seemayer, Andreas ^a   Hommes, Alexander ^a   Wandelt, Klaus ^b  

^a UNIVERSITY OF PADERBORN   (Germany)

^b UNIVERSITY OF BONN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; ELECTRON ENERGY LOSS SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY SPECTROSCOPY;

ANTIMONIDES; ATOMIC HYDROGEN; BINARY FILMS; OPTOELECTRONIC APPLICATIONS;

GALLIUM COMPOUNDS;

EID: 17644395951     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm048363b     Document Type: Article

References (51)

1. See the following and references therein: (a) Stringfellow, G. B. Organometallic Vapor-Phase Epitaxy: Theory and Practice; Academic Press: Boston, MA, 1989.
2. (b) Razeghi, M. Eur. Phys. J. Appl. Phys. 2003, 23, 149.
3. (c) Mauk, M. G.; Andreev, V. M. Semicond. Sci. Technol. 2003, 18, 191.
4. (d) Bett, A. W.; Sulima, O. V. Semicond. Sci. Technol. 2003, 18, 184.
5. (a) Akahane, K.; Yamamoto, N.; Gozu, S.; Ohtani, N. J. Cryst. Growth 2004, 264, 21.
6. (b) Xic, Q. H.; Van Nostrand, J. E.; Jones, R. L.; Sizelove, J.; Look, D. C. J. Cryst. Growth 1999, 207, 255.
7. (c) Grey, R.; Mansoor, F.; Haywood, S. K.; Hill, G.; Mason, N. J.; Walker, P. J. Opt. Mater. 1996, 6, 69.
8. (d) Ford, J. S.; Howard, F. P.; McGrady, G. S.; Davies, G. J. J. Cryst. Growth 1998, 188, 144.
9. (e) Mauk, M. G.; Shellenbarger, Z. A.; Cox, J. A.; Sulima, O. V.; Bett, A. W.; Mueller, R. L.; Sims, P. E.; McNeely, J. B.; DiNetta, L. C. J. Cryst. Growth 2000, 211, 189.
10. (a) Aardvark, A.; Mason, N. J.; Walker, P. J. Prog. Cryst. Growth Charact. Mater. 1997, 35, 207.
11. (b) Agert, C.; Lanyi, P.; Bett, A. W. J. Cryst. Growth 2001, 225, 426.
12. (c) Biefeld, R. M. Mater. Sci. Eng. Rep. 2002, 36, 105.
13. (d) Dimroth, F.; Agert, C.; Bett, A. W. J. Cryst. Growth 2003, 248, 265.
14. (e) Möller, K., Kollonitsch, Z.; Giesen, C.; Heuken, M.; Willig, F.; Hannappel, T. J. Cryst. Growth 2003, 248, 244.
15. (a) Todd, M. A.; Bandari, G.; Baum, T. H. Chem. Mater. 1999, 77, 547.
16. (b) Harrison, B. C.; Tompkins, E. H. Inorg. Chem. 1962, 1, 951.
17. (b) Sugiura, O.; Kameda, H.; Shiina, K.; Matsumura, M. J. Electron. Mater. 1988, 17, 11.
18. See the following and references therein: (a) Park, H. S.; Schulz, S.; Wessel, H.; Roesky, H. W. Chem. Vap. Deposition 1999, 5, 179.
19. (b) Kuczkowski, A.; Schulz, S.; Assenmacher, W. J. Mater. Chem. 2001, 77, 3241.
20. (c) Berrigan, R. A.; Metson, J. B.; Russell, D. K. Chem. Vap. Deposition 1998, 4, 23.
21. (d) Subekti, A.; Goldys, E. M.; Paterson, M. J.; Drozdowics-Tomsia K.; Tansley, T. L. J. Mater. Res. 1999, 14, 1238.
22. (e) Alphandéry, E.; Nicholas, R. J.; Mason, N. J.; Zhang, B.; Möck P.; Booker, G. R. Appl. Phys. Lett. 1999, 74, 2041.
23. (f) Yi, S. S.; Hansen, D. M.; Inoki, C. K.; Harris, D. L.; Kuan, T. S.; Kuech, T. F. Appl. Phys. Lett. 2000, 77, 842.
24. (g) Müller-Kirsch, L.; Pohl, U. W.; Heitz, R.; Kirmse, H.; Neumann, W.; Bimberg, D. J. Cryst. Growth 2000, 227, 611.
25. (h) Yi, S. S.; Moran, P. D.; Zhang, X.; Cerrina, F.; Carter, J.; Smith, H. I.; Kuech, T. F. Appl. Phys. Lett. 2001, 78, 1358.
26. (a) Biefeld, R. M.; Allerman, A. A.; Kurtz, S. R. J. Cryst. Growth 1997, 174, 593.
27. (b) Ramelan, A. H.; Drozdowicz-Tomsia, K.; Goldys, E. M.; Tansley, T. L. J. Electron. Mater. 2001, 30, 965.
28. (c) Biefeld, R. M.; Kurtz, S. R.; Allerman, A. A. IEE Proc. Optoelectron. 1997, 144, 271.
29. (d) Giesen, C.; Szymakowski, A.; Rushworth, S.; Heuken, M.; Heime, K. J. Cryst. Growth 2000, 227, 450.
30. (c) Wang, C. A.; Salim, S.; Jensen, K. F.; Jones, A. C. J. Cryst. Growth 1997, 170, 55.
31. See the following and references therein: (a) Cowley, A. H.; Jones, R. A. Angew. Chem., Int. Ed. Engl. 1989, 28, 1208.
32. (b) Maury, F. Adv. Mater. 1991, 3, 542.
33. (c) Fischer, R. A. Chem. Unserer Zeit 1995, 29, 141.
34. (d) Sauls, F. C.; Interrante, L. V. Coord. Chem. Rev. 1993, 128, 193.
35. (e) Jones, A. C. Chem. Soc. Rev. 1997, 101.
36. (f) O'Brien, P.; Haggata, S. Adv. Mater. Opt. Electron. 1995, 5, 117.
37. 44 at 600°C. See the following and references therein: Ford, J. S.; Howard, F. P.; Davies, G. J. J. Cryst. Growth 1998, 188, 159.
38. Cowley, A. H.; Jones, R. A.; Nunn, C. M.; Westmoreland, D. L. Chem. Mater. 1990, 2, 221.
39. (a) Kuczkowski, A.; Schulz, S.; Nieger, M.; Saarenketo, P. Organometallics 2001, 20, 2000.
40. (b) Kuczkowski, A.; Fahrenholz, S.; Schulz, S.; Nieger, M. Organometallics 2004, 23, 3615.
41. 3Sb (243 ±17 kJ/mol).
42. 3Sb (243 ±17 kJ/mol).
43. The steady but slight mass increase (about 2%) between ambient temperature and 150°C is a simple heating effect (buoyancy of the pan) since no baseline correction was applied. In addition, moisture absorption and surface oxidation reactions of 1, which was transferred into the chamber through the air, cannot be excluded.
44. Annealing of a film that was deposited at 350°C for 2 h at 500°C resulted in the formation of broad reflections due to the presence of crystalline GaSb.
45. 2. However, since the XRD pattern was drawn on a logarithmic scale, it cannot be excluded that these peaks may arise from very low impurities of the substrate or the substrate holder.
46. The spectra were quantified using the Sb L and Ga K lines with calculated weight percentages of 36.41 and 63.59 for Ga and Sb in GaSb.
47. The Ar beam hit the film surface with an angle of 15° from the vertical alignment. Assuming each Ar ion removes one atom from the surface, the sputter rate can be estimated to be about 0.01 monolayer/s (=3 nm in 20 min). Since the films show a thickness profile (polycrystalline material) and since no vertical alignment of the Ar beam was used, no uniform removal of the surface layer takes place, which may explain to some extent the presence of a very small O and C concentration even after Ar bombardment.
48. The GaSb films were handled in air when transferred to the AES chamber.
49. Unfortunately, X-ray reflectometry could not be performed due to the lack of suitable instrumentation.
50. The adhesion of the GaSb film at the substrate is not very good, so the particles can easily be removed from the substrate surface. The poor adhesion most likely is the reason for the Vollmer-Weber-like growth.
51. (21 ) The quantification of EEL spectra uses the intensity of ionization edges in an energy interval of 10-200 eV after the edge. In the given situation with a narrow O K edge and with the Sb M edge present in the same spectrum, only the counts from a 5 eV energy interval can be used, leading to large standard deviations for the results. Oxygen was determined to be present in an amount of ∼ 1 % within thin areas of the samples.