Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices

EPJ Applied Physics

Volumn 23, Issue 3, 2003, Pages 149-205

  Razeghi, M ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTOCONDUCTING MATERIALS; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

DOUBLEHETERO STRUCTURE; FOCAL PLANE ARRAY; LONG-WAVELENGTH INFRARED RANGE; MID-WAVELENGTH INFRARED RANGE; MULTI-QUANTUM WELL; STRAINED SUPERLATTICE LASER;

SEMICONDUCTING ANTIMONY COMPOUNDS;

EID: 0141843600     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2003056     Document Type: Article

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