SCOPUS 정보 검색 플랫폼

Chemical Vapor Deposition

Volumn 5, Issue 4, 1999, Pages 179-184

First approach to an AlSb layer from the single-source precursors [Et2AlSb(SiMe3)2]2 and [iBu2AlSb(SiMe3)2]2

(4) Park, Hyung S a Schulz, Stephan b Wessel, Helge a Roesky, Herbert W a

a UNIVERSITY OF GÖTTINGEN (Germany)

b UNIVERSITY OF BONN (Germany)

Author keywords

Alsb; MOCVD; Pyrolysis; Single source precursor; WDS

Indexed keywords

EID: 0000395723 PISSN: 09481907 EISSN: None Source Type: Journal
DOI: 10.1002/(SICI)1521-3862(199908)5:4<179::AID-CVDE179>3.0.CO;2-6 Document Type: Article

Times cited : (20)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.