SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 30, Issue 8, 2001, Pages 965-971

Study of optical and electrical properties of AlxGa1-xSb grown by metalorganic chemical vapor deposition

(4) Ramelan, A H a Drozdowicz Tomsia, K a Goldys, E M a Tansley, T L a

a MACQUARIE UNIVERSITY (Australia)

Author keywords

AlGaSb; GaAs substrates; MOCVD

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTRUM ANALYSIS;

FABRY-PEROT OSCILLATIONS;

SEMICONDUCTING FILMS;

EID: 0035415624 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/BF02657718 Document Type: Article

Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.