Reactivity patterns of stibine and trisdimethylaminoantimony precursors for chemical beam epitaxial growth and etching

Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 144-151

  Foord, J S ^a   Howard, F P ^a   McGrady, G S ^a   Davies, G J ^b  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b MARTLESHAM HEATH   (United Kingdom)

Author keywords

Chemisorption; III V semiconductors; Surface reactions; Thin films

Indexed keywords

CHEMICAL BEAM EPITAXY; CHEMISORPTION; DECOMPOSITION; ETCHING; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SILICA; SUBSTRATES; SURFACE PHENOMENA; THIN FILMS;

GALLIUM ANTIMONIDE; INDIUM ANTIMONIDE; STIBINE; TRISDIMETHYLAMINOANTIMONY;

SEMICONDUCTING ANTIMONY COMPOUNDS;

EID: 0032097613     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00083-9     Document Type: Article

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