Liquid-phase epitaxy of low-bandgap III-V antimonides for thermophotovoltaic devices

Journal of Crystal Growth

Volumn 211, Issue 1, 2000, Pages 189-193

  Mauk, M G ^a   Shellenbarger, Z A ^a   Cox, J A ^a   Sulima, O V ^b   Bett, A W ^b   Mueller, R L ^c   Sims, P E ^a   McNeely, J B ^a   Dinetta, L C ^a  

^a GE ENERGY   (United States)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DIFFUSION; ENERGY GAP; OPTOELECTRONIC DEVICES; PHOTONS; PHOTOVOLTAIC CELLS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

ANTIMONIDES; POST GROWTH ZINC DIFFUSION PROCESS; THERMOPHOTOVOLTAIC DEVICES;

LIQUID PHASE EPITAXY;

EID: 0033884421     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00796-4     Document Type: Article

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