Atmospheric pressure chemical vapor deposition growth window for undoped gallium antimonide

Journal of Materials Research

Volumn 14, Issue 4, 1999, Pages 1238-1245

  Subekti, A ^a,b   Goldys, E M ^a   Paterson, Melissa J ^a   Drozdowicz Tomsia, K ^a   Tansley, T L ^a  

^a MACQUARIE UNIVERSITY   (Australia)

^b UNIVERSITY OF JEMBER   (Indonesia)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; ELECTRIC PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NUCLEATION; OPTICAL MICROSCOPY; OPTICAL PROPERTIES; PHASE DIAGRAMS; SUBSTRATES; SURFACES; TEMPERATURE; VAPOR PHASE EPITAXY;

FILM EVOLUTION; GROWTH RATE; SUBSTRATE TEMPERATURE; UNDOPED GALLIUM ANTIMONIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032634881     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0169     Document Type: Article

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