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Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 159-167

Reaction models for the homoepitaxial and selected area growth of GaSb by MOMBE

(3) Foord, J S a Howarda, F P a Davies, G J b

a UNIVERSITY OF OXFORD (United Kingdom)

b MARTLESHAM HEATH (United Kingdom)

Author keywords

Computer modelling and simulations; III V semiconductors; Surface reactions; Thin films

Indexed keywords

CHEMICAL BEAM EPITAXY; COMPUTER SIMULATION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA; SURFACE TREATMENT; THIN FILMS;

GALLIUM ANTIMONIDE; METALLORGANIC MOLECULAR BEAM EPITAXY; SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032098504 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00089-X Document Type: Article

Times cited : (5)

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