SCOPUS 정보 검색 플랫폼

Optical Materials

Volumn 6, Issue 1-2, 1996, Pages 69-74

Growth of GaSb on GaAs/AlAs mirrors for 1.68 μm detectors

(6) Grey, R a Mansoor, F b Haywood, S K b Hill, G a Mason, N J c Walker, P J c

a UNIVERSITY OF SHEFFIELD (United Kingdom)

b UNIVERSITY COLLEGE LONDON (United Kingdom)

c UNIVERSITY OF OXFORD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; INFRARED DETECTORS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NUCLEATION; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

ALUMINUM ARSENIDE; DARK CURRENT; DISTRIBUTED BRAGG REFLECTORS; GALLIUM ANTIMONIDE; NONRESONANT DETECTOR; RESONANT CAVITY ENHANCED DETECTOR; TRIISOPROPYLGALLIUM; TRISDIMETHYLAMINOANTIMONY;

MIRRORS;

EID: 0030181337 PISSN: 09253467 EISSN: None Source Type: Journal
DOI: 10.1016/0925-3467(96)00024-9 Document Type: Article

Times cited : (11)

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