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Volumn , Issue , 1991, Pages 75-79
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Dependence of dielectric time to breakdown distributions on test structure area
a
a
NONE
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC BREAKDOWN;
NITRIDES;
OPTIMIZATION;
OXIDES;
AREA EXTRAPOLATION;
DRAM MEMORIES;
OXIDE-NITRIDE-OXIDE;
POISSON MODEL;
TIME-TO-BREAKDOWN DISTRIBUTIONS;
DATA STORAGE, SEMICONDUCTOR;
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EID: 0026367570
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (38)
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References (15)
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