New approach to analyze the degradation and breakdown of thin SiO2 films under static and dynamic electrical stress

IEEE Electron Device Letters

Volumn 20, Issue 7, 1999, Pages 317-319

  Rodriguez R ^a   Nafria M ^a   Miranda, E ^a   Sune J ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL STRUCTURE; DEGRADATION; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; MOS DEVICES; POLYCRYSTALLINE MATERIALS; SILICA;

CHARGE INJECTION; DIELECTRIC BREAKDOWN; DYNAMIC ELECTRICAL STRESS; DYNAMIC TESTING; OXIDE BREAKDOWN; STATIC ELECTRICAL STRESS;

THIN FILMS;

EID: 0343450566     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.772362     Document Type: Article

References (12)

1. E. Rosenbaum, Z. Liu, and C. Hu, "Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions," IEEE Trans. Electron Devices, vol. 40, pp. 2287-2295, 1993.
2. D. J. Dumin and S. Vanchinathan, "Bipolar stressing, breakdown, and trap generation in thin silicon oxides," IEEE Trans. Electron Devices, vol. 41, pp. 936-940, 1994.
3. M. Nafría, J. Suñé, D. Yélamos, and X. Aymerich, "Degradation and breakdown of thin silicon dioxide films under dynamic electrical stress," IEEE Trans. Electron Devices, vol. 43, pp. 2215-2226, 1996.
4. 2 films subjected to static and dynamic stresses," IEEE Trans. Electron Devices, vol. 45, pp. 881-888, 1998.
5. D. J. DiMaria, E. Cartier, and D. Arnold, "Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon," J. Appl. Phys., vol. 73, pp. 3367-3384, 1993.
6. D. J. Dumin, J. R. Maddux, R. S. Scott, and R. Subramaniam, "A model relating wearout to breakdown in thin oxides," IEEE Trans. Electron Devices, vol. 41, pp. 1570-1579, 1994.
7. 2 films," IEEE Trans. Electron Devices, vol. 35, pp. 2259-2267, Dec. 1988.
8. D. J. DiMaria and E. Cartier, "Mechanism for stress-induced leakage currents in thin silicon dioxide films." J. Appl. Phys., vol. 78, no. 6, pp. 3883-3894, 1995.
9. Y. Chen, J. S. Suehle, C. C. Shen, J. B. Berstein, C. Messick, and P. Chaparala, "A new technique for determining long-term TDDB acceleration parameters of thin gate oxides," IEEE Electron Device Lett., vol. 19, pp. 219-221, 1998.
10. D. J. DiMaria, "Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures," Microelectron. Eng., vol. 36, pp. 317-320, 1997.
11. 2 based dielectrics," Microelectron. Eng., vol. 36, pp. 329-332, 1997.
12. M. Depas and M. M. Heyns, "Relation between trap creation and breakdown during tunneling current stressing of sub-3-nm gate oxide," Microelectron. Eng., vol. 36, pp. 21-24, 1997.