A Model Relating Wearout to Breakdown in Thin Oxides

IEEE Transactions on Electron Devices

Volumn 41, Issue 9, 1994, Pages 1570-1580

  Dumin, David J ^a   Maddux, J R ^a   Scott, R S ^a   Subramoniam, R ^a  

^a CLEMSON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY MEASUREMENT (SPECIFIC GRAVITY); ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC VARIABLES MEASUREMENT; ELECTRONS; IONIZATION; LEAKAGE CURRENTS; MATHEMATICAL MODELS; WEAR OF MATERIALS;

CONDUCTION BAND; CRITICAL ENERGY DENSITY; EFFECTIVE OXIDE THINNING; HIGH VOLTAGE STRESSING; MULTIMODAL DISTRIBUTION; THIN OXIDES; TIME DEPENDENT DIELECTRIC BREAKDOWN; WEAROUT; WEAROUT MEASUREMENT;

OXIDES;

EID: 0028515004     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.310108     Document Type: Article

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