SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Journal of Applied Physics

Volumn 50, Issue 10, 1979, Pages 6366-6372

Electron trapping in SiO2 at 295 and 77 °K

(5) Young, D R a Irene, E A a DiMaria, D J a De Keersmaecker, R F a Massoud, H Z b

a IBM T J WATSON RESEARCH CENTER (United States)

b STANFORD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; SEMICONDUCTOR DEVICES, MIS;

SILICA;

EID: 0018531802 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.325727 Document Type: Article

Times cited : (219)

References (12)

1
- 0015207089
- (1971) J. Appl. Phys , vol.42 , pp. 5654
- Nicollian, E.H.¹ Berglund, C.N.²

2
- 0015604742
- (1973) Jpn. J. Appl. Phys , vol.12 , pp. 398
- Ushirokawa, A.¹ Suzuki, E.² Warashima, M.³

3
- 0016330431
- (1974) J. Appl. Phys , vol.45 , pp. 5373
- Ning, T.H.¹ Yu, H.N.²

4
- 0016871464
- (1976) J. Electrochem. Soc , vol.123 , pp. 42
- Gdula, R.A.¹

5
- 0016962739
- (1976) J. Appl. Phys , vol.47 , pp. 2740
- DiMaria, D.J.¹ Aitken, J.M.² Young, D.R.³

6
- 0018151899
- (1978) J. Appl. Phys , vol.49 , pp. 5997
- Ning, T.H.¹

7
- 0018062167
- in edited by S. T. Pantelides (Pergamon, New York,)
- (1978) Proceedings of the International Topical Conference of the Physics of [formula omitted] and Its Interfaces , pp. 160
- DiMaria, D.J.¹

8
- 0016335365
- (1974) J. Electrochem. Soc , vol.121 , pp. 1613
- Irene, E.A.¹

9
- 0014577199
- (1969) Appl. Phys. Lett , vol.15 , pp. 174
- Nicollian, E.H.¹ Goetzberger, A.² Berglund, C.N.³

10
- 0015145303
- (1971) J. Appl. Phys , vol.42 , pp. 4390
- Powell, R.J.¹ Berglund, C.N.²

11
- 0016993952
- (1976) J. Appl. Phys , vol.47 , pp. 4073
- DiMaria, D.J.¹

12
- 0018063912
- in edited by S. T. Pantelides (Pergamon, New York,)
- (1978) Proceedings of the International Topical Conference of the Physics of [formula omitted] and Its Interfaces , pp. 24
- Weinberg, Z.A.¹ Rubloff, G.W.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.