Isotropic/anisotropic growth behavior and faceting morphology of Si epitaxial layer selectively grown by cold wall ultrahigh vacuum chemical vapor deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 275-282

  Lim, Seung Hyun ^a   Song, Sukchan ^a   Yoon, Euijoon ^a   Lee, Jong Ho ^b  

^a Seoul National University   (South Korea)

^b Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; DIFFUSION; EPITAXIAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; LITHOGRAPHY; MASS TRANSFER; MORPHOLOGY; OXIDATION; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

FACETING MORPHOLOGY; SELECTIVE EPITAXIAL GROWTH (SEG); SELF-ALIGNED CONTACT (SAC) STRUCTURES;

SILICON;

EID: 1642310963     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1643400     Document Type: Conference Paper

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