Development of self-aligned contact technology for 0.18 μm static random access memory devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 5, 1999, Pages 2373-2377

  Qiao, Jianmin ^a  

^a CYPRESS SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22844456625     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590921     Document Type: Article

References (7)

1. C. Lage, J. D. Hayden, and C. Subramanian, Tech. Dig. Int. Electron Devices Meet. 275 (1996).
2. J. Y. C. Sun, S.-Y. Chiang, and M. Liu, Tech. Dig. Int. Electron Devices Meet. 321 (1998).
3. J. E. Tong, K. Schertenleib, and R. A. Carpio, Solid State Technol. 27, 161 (1984).
4. J.-H Kim, J.-O. Ryu, J.-S. Kim, J.-W. Kim, and Y.-S. Seol, Proc. SPIE 3507, 181 (1998).
5. J. E. Nulty and P. S. Trammel, U.S. Patent No. 5,468,342 (1995).
6. J. E. Nulty, U.S. Patent No. 5,562,801 (1996).
7. W. Kern and G. L. Schnable, RCA Rev. 43, 423 (1982).