Interfacet mass transport and facet evolution in selective epitaxial growth of Si by gas source molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2381-2386

  Xiang, Qi ^a   Li, Shaozhong ^a   Wang, Dawen ^a   Wang, Kang L ^a   Couillard, J Greg ^b   Craighead, Harold G ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000039138     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588866     Document Type: Article

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