Drivability improvement on deep-submicron MOSFET's by elevation of source/drain regions

IEEE Electron Device Letters

Volumn 20, Issue 7, 1999, Pages 366-368

  Yamakawa, Satoshi ^a   Sugihara, Kohei ^a   Furukawa, Taisuke ^a   Nishioka, Yasutaka ^a   Nakahata, Takumi ^a   Abe, Yuji ^a   Maruno, Shigemitsu ^a   Tokuda, Yasunori ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; EPITAXIAL GROWTH; ETCHING; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

ELEVATED SOURCE DRAIN; SHORT CHANNEL EFFECT; SILICON SELECTIVE EPITAXIAL GROWTH TECHNIQUE;

MOSFET DEVICES;

EID: 0033164974     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.772378     Document Type: Article

References (6)

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