Influence of doping on facet formation at the SiO2/Si interface

Surface Science

Volumn 440, Issue 1-2, 1999, Pages 41-48

  Gallas, B ^a   Hartmann, J M ^a   Breton, G ^a   Harris, J J ^a   Zhang, J ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BORON; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; POLYCRYSTALLINE MATERIALS; SILICA; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

GAS SOURCE MOLECULAR BEAM EPITAXY; HIGH INDEX FACETS; SELECTIVE EPITAXIAL GROWTH;

INTERFACES (MATERIALS);

EID: 0033207726     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00663-9     Document Type: Article

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